| Phototransistor Specifications |
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| Collector Emitter Breakdown Voltage (0.1 mA) |
6 V |
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| Collector Dark Current (5 VCE) |
3 nA typ. |
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| Collector Emitter Capacitance (Vce=0, f=1MHz, E=0) |
16 pF |
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| Collector Light Current (5 VCE, 20 lx) |
5 to 24µA |
|
| Collector Light Current (5 VCE,100 lx) |
75µA |
|
| Angle of Half Sensitivity |
±50 degrees |
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| Wavelength of Peak Sensitivity |
570 nm |
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| Range of Spectral Bandwidth |
440 to 800 nm |
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| Collector Emitter Saturation Voltage (20 lx, 1.2 µA) |
0.1 V |
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| RoHS |
Compliant |
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| |
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| Absolute Maximum Ratings (Ta = 25 C) |
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| Collector Emitter Voltage |
6 V |
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| Emitter Collector Voltage |
1.5 V |
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| Collector Current |
20 mA |
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| Power Dissipation |
100 mW (Tamb≤55°C) |
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| Junction Temperature |
100 °C |
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| Operating Temperature Range |
[-40°C to +85°C] |
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| Storage Temperature Range |
[-40°C to +100°C] |
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| Soldering Temperature |
260°C (t≤5 s, 2 mm distance to package |
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| Thermal Resistance Junction/Ambient |
230 K/W (J-STD-051,soldered on PCB) |
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