| Phototransistor Specifications | |
| Collector Emitter Breakdown Voltage (0.1 mA) | 6 V |
| Collector Dark Current (5 VCE) | 3 nA typ. |
| Collector Emitter Capacitance (Vce=0, f=1MHz, E=0) | 16 pF |
| Collector Light Current (5 VCE, 20 lx) | 5 to 24µA |
| Collector Light Current (5 VCE,100 lx) | 75µA |
| Angle of Half Sensitivity | ±50 degrees |
| Wavelength of Peak Sensitivity | 570 nm |
| Range of Spectral Bandwidth | 440 to 800 nm |
| Collector Emitter Saturation Voltage (20 lx, 1.2 µA) | 0.1 V |
| Absolute Maximum Ratings (Ta = 25 C) | |
| Collector Emitter Voltage | 6 V |
| Emitter Collector Voltage | 1.5 V |
| Collector Current | 20 mA |
| Power Dissipation | 100 mW (Tamb≤55°C) |
| Junction Temperature | 100 °C |
| Operating Temperature Range | [-40°C to +85°C] |
| Storage Temperature Range | [-40°C to +100°C] |
| Soldering Temperature | 260°C (t≤5 s, 2 mm distance to package |
| Thermal Resistance Junction/Ambient | 230 K/W (J-STD-051,soldered on PCB) |
Contact us for volume quantity purchases of RoHS compliant product.
Monnit Industrial Sensors with Solar Power Option |
|
|
Need Longer Battery Life?
|
![]() |