| Photodiode Specifications | |
| Sensor Technology: | High Sensitive Photodiode |
| Material: | Silicon |
| Peak Wavelength: | 580 nm |
| Maximum Reverse Voltage: | 6 V |
| Maximum Power Dissipation: | 40 mW |
| Maximum Light Current: | 500 uA |
| Maximum Dark Current: | 0.3 uA |
| Maximum Rise Time: | 8.5 ms |
| Maximum Fall Time: | 8.5 ms |
| Maximum Operating Temperature Range: | -30°C to +85°C |
| RoHS | Compliant |